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| RF3266 3V W-CDMA LINEAR PA MODULE RoHS Compliant & Pb-Free Product Package Style: QFN, 16-Pin, 3x3x0.9mm VCCBIAS VCC1 Features +28dBm Linear Output Power, ULRMC12.2 (26.5dBm, HSDPA) +28dB Linear Gain at +28dBm Digital Controlled HPM/LPM HSDPA Capable Low Quiescent Current (LPM <20mA) 21% Linear Efficiency@19dBm (LPM) RF IN 1 16 15 14 Interstage MN IM 13 12 VCC2 Q1 NC 2 IMN Q2 VCC2L 11 VCC2 OMN VMODE 3 Bias 10 VCC2 VREG 4 5 VDET Integrated Power Detector 9 RF OUT 8 NC 6 NC 7 NC Applications 3V W-CDMA Handsets Multi-Mode W-CDMA 3G Handsets Spread-Spectrum Systems PCMCIA Cards Functional Block Diagram Product Description The RF3266 is a high-power, high-efficiency, linear PA module designed for use as the final RF amplifier in 3V, 50 W-CDMA handheld digital cellular equipment, spread-spectrum systems, and other applications in the 1920MHz to 1980MHz band. The RF3266 has a digital control pin which, when enabled, will allow the amplifier to operate up to 19dBm output power with reduced current consumption. In the Low Power Mode, the current consumption may be reduced by more than 50% that of a standard power amplifier. The RF3266 is fully HSDPA-capable and is assembled in a 16-pin, 3mmx3mm, QFN package. Ordering Information RF3266 RF3266PCBA-410 3V W-CDMA Linear PA Module Fully Assembled Evaluation Board Optimum Technology Matching(R) Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. Rev A0 DS070529 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 10 RF3266 Absolute Maximum Ratings Parameter Supply Voltages, VCC (No RF) Supply Voltage,VCC (with RF) PINMAX =5dBm, POUT =29dBm, VSWR=5:1 Supply Voltage, VCCBIAS Control Voltage, VMODE Control Voltage, VREG RF - Input Power RF - Output Power Operating Case Temperature Storage Temperature Rating 7.0 4.3 Unit V V Caution! ESD sensitive device. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RoHS status based on EUDirective2002/95/EC (at time of this document revision). 7.0 3.5 3.5 +6 +30 -30 to +110 -40 to +150 V V V dBm dBm C C Parameter High Power Mode (VMODE Low) Operating Frequency Range Maximum Linear Output Maximum Linear Output (HSDPA) Power Gain Gain Delta versus Frequency ACLR1 @ 5MHz ACLR1 @ 5MHz, HSDPA ACLR2 @ 10MHz ACLR2 @ 10MHz, HSDPA EVM Linear Efficiency ICC (ICC, ICC_Bias) Input VSWR Harmonic Output (2fo) Harmonic Output (3fo) Min. Specification Typ. Max. Unit Condition TC =+25C, VCC =3.4V, VMODE =0V, VREG =2.85V, Mod.=W-CDMA ULRMC 12.2, POUT =+28dBm, unless otherwise specified. 1920 28 26.5 25 0 28 0.5 -40 -40 -52 -52 1 36 2.5 40 463 2.1:1 1980 MHz dBm dBm HSDPA Modulation. See Condition A, Table 1. 32 1 -36 -36 -48 -48 4 515 -10 -25 dB dB dBc dBc dBc dBc % % mA dBm dBm f=2fo, RBW=1MHz f=3fo, RBW=1MHz POUT =+26.5dBm. See Condition A, Table 1. POUT =+26.5dBm. See Condition A, Table 1. 2 of 10 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A0 DS070529 RF3266 Parameter High Power Mode (VMODE Low), cont'd Noise Power GPS GSM DCS W-CDMA -104 -110 -92 -95 dBm/30KHz -50 Specification Typ. Max. Unit Condition W-CDMA -98 Bluetooth PHS Stability -103 -57 Ruggedness Reverse Intermodulation Product 5MHz Offset 10MHz Offset Phase Jump No Damage -31 -41 25 Rev A0 DS070529 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 10 RF3266 Parameter Low Power Mode (VMODE High) Operating Frequency Range Maximum Linear Output Maximum Linear Output (HSDPA) Power Gain Gain Delta versus Frequency ACLR1 @ 5MHz ACLR1 @ 5MHz, HSDPA ACLR2 @ 10MHz ACLR2 @ 10MHz, HSDPA EVM Input VSWR Linear Efficiency ICC (ICC, ICC_Bias) Harmonic Output (2fo) Harmonic Output (3fo) Stability 16 1 1920 +19 +18 16 0 20 0.5 -40 -40 -52 -52 2.5 1.3:1 21 110 145 -15 -25 -60 % mA dBm dBm dBc POUT =+19dBm, f=2fo, RBW=1MHz POUT =+19dBm, f=3fo, RBW=1MHz 3.1 Specification Typ. Max. Unit Condition TC =+25C, VCC =3.4V, VMODE =2.8V, VREG =2.85V, Mod.=W-CDMA ULRMC 12.2, POUT =19dBm, unless otherwise specified. Ruggedness Reverse Intermodulation Product 5MHz Offset 10MHz Offset Phase Jump No Damage -31 -41 25 4 of 10 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A0 DS070529 RF3266 Parameter Power Supply Power Supply Voltage (VCC1/VCC2) Power Supply Voltage (VCCBIAS) VREG "Low" Voltage VREG "High" Voltage VREG Current High Power Idle Current (ICC1/ICC2/ICC_BIAS) Low Power Idle Current (ICC1/ICC2/ICC_BIAS) Leakage Current (ICC1/ICC2/ICC_BIAS) VMODE "Low" Voltage VMODE "High" Voltage VMODE Current RF Turn-On/Off Time DC Turn-On/Off Time 0.0 2.0 500 50 10 3.1 1.7 0 2.75 2.85 4.00 75 18 0.2 3.4 3.4 4.3 4.3 0.5 2.95 4.50 100 25 5 0.5 3.0 600 6 10 V V V V mA mA mA A V V A uS uS TC =+25C, VCC =3.4V, VMODE =2.8V, VREG =2.85V, RDET =3.6k, ZLOAD =50, Mod.=W-CDMAULRMC12.2, unless otherwise specified. 1920 +10 0.1 0.5 2.2 0.2 0.7 2.5 1980 +28 0.3 1.0 2.8 MHz dBm V V V ULRMC12.2kbps POUT =0W POUT =+16dBm POUT =+28dBm VCC1/VCCBIAS/VCC2 =3.4V, VMODE =0.0V, POUT =0W, VREG =2.85V, T=+25C VCC1/VCCBIAS/VCC2 =3.4V, VMODE =2.8V, POUT =0W, VREG =2.85V, T=+25C VCC1/VCCBIAS/VCC2 =4.3V, no RF applied, VMODE =0.0V, VREG =0.0V, T=+25C Voltage range for High power mode. Voltage range for Low power mode. PA shutdown PA enabled Min. Specification Typ. Max. Unit Condition Peak Envelope Power Detector (HPM) Operating Frequency Range Output Power Operating Range DC Output Voltage Condition Table 1 A) Max Linear Output (POUTMAX_1) reduction at normal and high voltage (VCC >3.4V). As a reference, the following setup shall be used for HSDPA test with reduced output power. Parameter Output Power (POUT_MAX_1) for different ratio of c to d for all values of hs Conditions A) 1/15 +26.5dBm +25.5dBm +24.5dBm Condition Table 2 A) Max Linear Output (POUTMAX_1) reduction at normal and high voltage (VCC >3.4V). As a reference, the following setup shall be used for HSDPA test with reduced output power. Parameter Output Power (POUT_MAX_1) for different ratio of c to d for all values of hs Conditions A) 1/15 +18dBm +17dBm +16dBm Rev A0 DS070529 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 10 RF3266 Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Pkg Base Function RF IN NC VMODE VREG VDET NC NC NC RF OUT VCC2 VCC2 VCC2 VCC2L IM VCC1 VCCBIAS GND Description AC-coupled RF input internally matched to 50. This pin must remain floating. Digital control voltage input for switching the PA from low power mode to high power mode and vice versa. A "low" on this pin operates the PA in the specified high power mode. A "high" on this pin operates the PA in the specified low power mode. Regulated voltage input required for operation of PA bias circuitry. This pin also functions as the PA enable/disable control. An external load resistor (RDET) is required on this pin. A lowpass filter of averaging functionality is also required to reduce voltage ripple (due to modulation) to an acceptable amount. An isolator is required on the PA output for proper operation of PDET when the PA operates into a non-50 load impedance. This pin must remain floating. This pin must remain floating. This pin must remain floating. AC-coupled RF output internally matched to 50. Power supply input for the collector voltage on Q2 RF output amplification stage. A low frequency decoupling capacitor (4.7F) is required on this line. The voltage on this pin may be controlled by a DC converter. Same as pin 10. Same as pin 10. Power supply input for the collector voltage on LPM Q2 RF output amplification stage. A low frequency decoupling capacitor (4.7F) is required on this line. The voltage on this pin may be controlled by a DC-DC converter. Interstage matching. Power supply input for the collector voltage on Q1 RF output amplification stage. A low frequency decoupling capacitor (4.7F) is required on this line. The voltage on this pin may be controlled by a DC-DC converter. Pin 15 is connected internally to pin 14, and should be connected together on the PCB. Power supply input for the DC bias circuitry. The voltage on this pin must be 3.1V or greater for specified operation. Low frequency decoupling capacitors (4.7F and 1nF) are recommended on this line. Ground connection. The package backside should be soldered to a topside ground pad connecting to the PCB ground plane with multiple vias. The pad should have a low thermal resistance and low electrical impedance to the ground plane. Package Drawing 3.00 Pin 1 ID A 1.45 Pin 1 ID 3.00 1.45 0.28 TYP 0.18 0.05 0.15 C 2 PLCS B 0.15 C 2 PLCS 0.40 TYP 0.20 0.10 M C A B 0.50 TYP Dimensions in mm. Shaded areas represent pin 1. 0.203 REF 0.08 C 0.08 C 0.925 0.775 0.102 REF C 6 of 10 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A0 DS070529 RF3266 Preliminary Application Schematic V CC V CCBIAS TBD nH NOTES: * Optional Component ** Place these capacitors as close to PA as possible. TBD nH An inductor may be required to isolate VCC1 from VCC2 depending on the layout. 4.7 F 4.7 F* 1 nF 1 nF 1 nF** 16 15 14 Interstage MN Q1 IMN Q2 Depending on the degree of HPM isolation from LPM this inductor may become optional and potentially be replaced with a copper trace on the PCB. 13 12 4.7 F RF IN 1 2 11 1 nF** VMODE 1 nF* 3 Bias OMN Integrated Power Detector 10 4 VREG 1 nF R1 3.6 k R3 SUT 5 9 8 RF OUT 6 7 R2 SUT R1 = 3.6 k typ. This load resistor determines the detector sensitivity. An internal 15 pF capacitor is in parallel with this load resistor. R3 is optional and may be used in conjunction with R2 to scale PDET (max) if desired. This capacitor is used in conjunction with R1, R2 and R3 to set the rise and fall time of the detected output voltage, and tradeoff acceptable voltage ripple versus rise/fall time. SUT nF SUT = Select Under Test VDET Rev A0 DS070529 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 7 of 10 RF3266 PCB Design Requirements PCB Surface Finish The PCB surface finish used for RFMD's qualification process is electroless nickel, immersion gold. Typical thickness is 3inch to 8inch gold over 180inch nickel. PCB Land Pattern Recommendation PCB land patterns for RFMD components are based on IPC-7351 standards and RFMD empirical data. The pad pattern shown has been developed and tested for optimized assembly at RFMD. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. PCB Metal Land Pattern A = 0.64 x 0.28 (mm) Typ. B = 0.28 x 0.64 (mm) Typ. C = 0.78 x 0.64 (mm) D = 0.64 x 1.28 (mm) E = 1.50 (mm) Sq. Dimensions in mm. 1.50 Typ. 0.75 Typ. Pin 16 B Pin 1 C B 0.50 Typ. A A A A E D 0.75 1.00 Typ. Typ. A B B B B Pin 8 0.55 Typ. 0.55 Typ. 0.75 Typ. Figure 1. PCB Metal Land Pattern (Top View) 8 of 10 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A0 DS070529 RF3266 PCB Solder Mask Pattern Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the PCB metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. The center-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask clearance can be provided in the master data or requested from the PCB fabrication supplier. A = 0.74 x 0.38 (mm) Typ. B = 0.38 x 0.74 (mm) Typ. C = 1.60 (mm) Sq. Dimensions in mm. 1.50 Typ. 0.50 Typ. Pin 16 Pin 1 BBBB A A A A A A A A Pin 8 Pin 12 0.50 Typ. C 0.75 Typ. 1.50 Typ. 0.55 Typ. BBBB 0.75 Typ. 0.55 Typ. Figure 2. PCB Solder Mask Pattern (Top View) Thermal Pad and Via Design The PCB land pattern has been designed with a thermal pad that matches the die paddle size on the bottom of the device. Thermal vias are required in the PCB layout to effectively conduct heat away from the package. The via pattern has been designed to address thermal, power dissipation and electrical requirements of the device as well as accommodating routing strategies. The via pattern used for the RFMD qualification is based on thru-hole vias with 0.203mm to 0.330mm finished hole size on a 0.5mm to 1.2mm grid pattern with 0.025mm plating on via walls. If micro vias are used in a design, it is suggested that the quantity of vias be increased by a 4:1 ratio to achieve similar results. Rev A0 DS070529 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 9 of 10 RF3266 Tape and Reel Information Carrier tape basic dimensions are based on EIA481. The pocket is designed to hold the part for shipping and loading onto SMT manufacturing equipment, while protecting the body and the solder terminals from damaging stresses. The individual pocket design can vary from vendor to vendor, but width and pitch will be consistent. Carrier tape is wound or placed onto a shipping reel either 330 mm (13 inches) in diameter or 178 mm (7 inches) in diameter. The center hub design is large enough to ensure the radius formed by the carrier tape around it does not put unnecessary stress on the parts. Prior to shipping, moisture sensitive parts (MSL level 2a-5a) are baked and placed into the pockets of the carrier tape. A cover tape is sealed over the top of the entire length of the carrier tape. The reel is sealed in a moisture barrier, ESD bag, which is placed in a cardboard shipping box. It is important to note that unused moisture sensitive parts need to be resealed in the moisture barrier bag. If the reels exceed the exposure limit and need to be rebaked, most carrier tape and shipping reels are not rated as bakeable at 125C. If baking is required, devices may be baked according to section 4, table 4-1, column 8 of Joint Industry Standard IPC/JEDEC J-STD-033A. The following table provides useful information for carrier tape and reels used for shipping the devices described in this document. RFMD Part Number RF3266TR7 Reel Diameter Inch (mm) 7 (178) Hub Diameter Inch (mm) 2.4 (61) Width (mm) 12 Pocket Pitch (mm) 4 Feed Single Units per Reel 2500 QFN (Carrier Tape Drawing with Part Orientation) Notes: 1. All dimensions are in millimeters (mm). 2. Unless otherwise specified, all dimension tolerances per EIA-481. Ao = 3.18 0.10 Bo = 3.18 0.10 F = 5.50 0.05 Ko = 1.02 0.10 P = 4.00 0.10 W = 12.00 +0.30/-0.10 4.00 0.10 2.00 0.05 O1.50.10 1.750.10 0.279 .020 15 inch Trailer Sprocket holes toward rear of reel Pin 1 Location Top View 15 inch Leader F RF Part Number Trace Code RF Part Number Trace Code RF Part Number Trace Code RF Part Number Trace Code RF Part Number Trace Code RF Part Number Trace Code RF Part Number Trace Code W Bo P Ao Ko 10 of 10 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A0 DS070529 |
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